Capacitors having a capacitor dielectric layer comprising a...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S296000, C257S310000, C257S313000

Reexamination Certificate

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06943392

ABSTRACT:
The invention comprises capacitors having a capacitor dielectric layer comprising a metal oxide having multiple different metals bonded with oxygen. In one embodiment, a capacitor includes first and second conductive electrodes having a high k capacitor dielectric region positioned therebetween. The high k capacitor dielectric region includes a layer of metal oxide having multiple different metals bonded with oxygen. The layer has varying stoichiometry across its thickness. The layer includes an inner region, a middle region, and an outer region. The middle region has a different stoichiometry than both the inner and outer regions.

REFERENCES:
patent: 4105810 (1978-08-01), Yamazaki et al.
patent: 4261698 (1981-04-01), Carr et al.
patent: 4691662 (1987-09-01), Roppel et al.
patent: 5006363 (1991-04-01), Fujii et al.
patent: 5164363 (1992-11-01), Eguchi et al.
patent: 5183510 (1993-02-01), Kimura
patent: 5254505 (1993-10-01), Kamiyama
patent: 5256455 (1993-10-01), Numasawa
patent: 5261961 (1993-11-01), Takasu et al.
patent: 5270241 (1993-12-01), Dennison et al.
patent: 5312783 (1994-05-01), Takasaki et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5395771 (1995-03-01), Nakato
patent: 5459635 (1995-10-01), Tomozawa et al.
patent: 5468687 (1995-11-01), Carl et al.
patent: 5470398 (1995-11-01), Shibuya et al.
patent: 5525156 (1996-06-01), Manada et al.
patent: 5596214 (1997-01-01), Endo
patent: 5614018 (1997-03-01), Azuma et al.
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5635741 (1997-06-01), Tsu et al.
patent: 5656329 (1997-08-01), Hampden-Smith
patent: 5663089 (1997-09-01), Tomozawa et al.
patent: 5702562 (1997-12-01), Wakahara
patent: 5711816 (1998-01-01), Kirlin et al.
patent: 5719417 (1998-02-01), Roeder et al.
patent: 5723361 (1998-03-01), Azuma et al.
patent: 5731948 (1998-03-01), Yializis et al.
patent: 5736759 (1998-04-01), Haushaalter
patent: 5776254 (1998-07-01), Yuuki et al.
patent: 5783253 (1998-07-01), Roh
patent: 5798903 (1998-08-01), Dhote et al.
patent: 5834060 (1998-11-01), Kawahara et al.
patent: 5909043 (1999-06-01), Summerfelt
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 5976990 (1999-11-01), Mercaldi et al.
patent: 5989927 (1999-11-01), Yamonobe
patent: 6025222 (2000-02-01), Kimura et al.
patent: 6037205 (2000-03-01), Huh et al.
patent: 6043526 (2000-03-01), Ochiai
patent: 6046345 (2000-04-01), Kadokura et al.
patent: 6078492 (2000-06-01), Huang et al.
patent: 6090443 (2000-07-01), Eastep
patent: 6101085 (2000-08-01), Kawahara et al.
patent: 6126753 (2000-10-01), Shinriki et al.
patent: 6127218 (2000-10-01), Kang
patent: 6143679 (2000-11-01), Nagasawa et al.
patent: 6146907 (2000-11-01), Xiang et al.
patent: 6150684 (2000-11-01), Sone
patent: 6153898 (2000-11-01), Watanabe et al.
patent: 6156638 (2000-12-01), Agarwal et al.
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6211096 (2001-04-01), Allman et al.
patent: 6215650 (2001-04-01), Gnade et al.
patent: 6236076 (2001-05-01), Arita et al.
patent: 6238734 (2001-05-01), Senzaki et al.
patent: 6245652 (2001-06-01), Gardner et al.
patent: 6258170 (2001-07-01), Somekh et al.
patent: 6258654 (2001-07-01), Gocho
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6285051 (2001-09-01), Ueda et al.
patent: 6287935 (2001-09-01), Coursey
patent: 6323057 (2001-11-01), Sone
patent: 6325017 (2001-12-01), DeBoer et al.
patent: 6335049 (2002-01-01), Basceri
patent: 6335302 (2002-01-01), Satoh et al.
patent: 6337496 (2002-01-01), Jung
patent: 6338970 (2002-01-01), Suh
patent: 6362068 (2002-03-01), Summerfelt et al.
patent: 6372686 (2002-04-01), Golden
patent: 6422281 (2002-07-01), Ensign, Jr. et al.
patent: 6500487 (2002-12-01), Holst et al.
patent: 6507060 (2003-01-01), Ren et al.
patent: 6527028 (2003-03-01), Miller
patent: 6566147 (2003-05-01), Basceri et al.
patent: 6602376 (2003-08-01), Bradshaw
patent: 2002/0197793 (2002-12-01), Domfest et al.
patent: 195 34 082 (1996-03-01), None
patent: 0 030 798 (1981-06-01), None
patent: 0 306 069 (1989-03-01), None
patent: 0 388 957 (1990-09-01), None
patent: 0 474 140 (1991-08-01), None
patent: 0 474 140 (1992-03-01), None
patent: 0 810 666 (1997-12-01), None
patent: 0 835 950 (1998-04-01), None
patent: 0 855 735 (1998-07-01), None
patent: 0 892 426 (1999-01-01), None
patent: 0 957 522 (1999-11-01), None
patent: 2 194 555 (1988-03-01), None
patent: 2250970 (1990-10-01), None
patent: 04-24922 (1992-01-01), None
patent: 04-115533 (1992-04-01), None
patent: 04-180566 (1992-06-01), None
patent: 6-221446 (1994-08-01), None
patent: 08-060347 (1996-03-01), None
patent: 2000091333 (2000-03-01), None
patent: WO 98/39497 (1998-09-01), None
patent: WO 99/64645 (1999-12-01), None
patent: WO 01/16395 (2001-03-01), None
Aoyama et al., “Leakage Current eichanism of Amorphous and Polycrystalline Ta2O3Films Grown by chemical Vapor Deposition,” 1995, pp. 977-983.
Stemmer et al., “Accommodation of nonstochiometry in (100) fiber-textured . . . thin films grown by chemical vapor deposition,” © 1999 American Institute of Physics, pp. 2432-2434.
Streiffer et al., “Ferroelctricity in thin films: The dielectric response of fiber-textured . . . the films grown by chemical vapor deposition,” © 1999 American Institute of Physics, pp. 45654575.
Peter Van Zant, “Microchip Fabrication—Third Edition,” © 1997, pp. 319-320.
U.S. Appl. No. 09/905,320, filed Jul. 13, 2001, Basceri et al.
U.S. Appl. No. 09/932,003, filed Aug. 17, 2001, Basceri.
U.S. Appl. No. 09/652,907, filed Aug. 31, 2000, Basceri et al.
U.S. Appl. No. 09/776,217, filed Feb. 2, 2001, Basceri.
C. Basceri et al., “The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr) TIO3 thin films grown by chemical vapor deposition”, May 1997, pp. 2497-2504.
Basceri C. “Electrical and Dielectric Properties of (Ba,Sr)TiO3, Thin Film Capactior for Ultra-High Density Dynamic Random Access Memories”, 1997, dissertation submitted to Graduate Faculty of N. Carolina State Univ., Dept. of Materials Science and Engineering.
Kim, et al., “Structural and Electrical Properties . . . ” Applied Physics Letters, US, American Institute of Physics vol. 65, No. 15, Oct. 10, 1994, pp. 1955-1957.
Arai T., et al., “Preparation of SrTiO3Films on 8-Inch Wafers . . . ” Jap. Journal of Applied Physics. vol. 35, No. 9B, Part 01, Sep. 1, 1996, pp. 4875-4879.
U.S. Appl. No. 09/580,733, filed May 26, 2000, Cem Basceri.
U.S. Appl. No. 09/476,516, filed Jan. 3, 2000, Cem Basceri.
U.S. Appl. No. 09/905,286, filed Jul. 13, 2001, Basceri et al.
Choi, Y. C., et al., ABSTRACT, “Improvements of the properties of Chemical-Vapor-Deposited (Ba,Sr) TiO3Films through Use of a Seed Layer”,Jpn. J. Appl. Phys., Part 1, vol. 35, No. 11, pp. 6824-6828 (1997).
Kim, Yong Tae, et al., ABSTRACT, “Advantages of RuO/sub x/Bottom Electrode in the Dielectric and Leakage Characteristics of (Ba,Sr)TiO/sub 3/capacitor”,Jpn. J. Appl. Phys., Part 1, vol. 35, No. 12A, pp. 6153-6156 (Dec. 1996).
Jia, Q.X., et al., ABSTRACT, “Structural and Dielectric Properties of Ba/sub 0.5/Sr/sub 0.5/TiO/sub 3/thin films with an epi-RuO/sub 2/bottom electrode”,Integrated Ferroelectrics, vol. 19, No. 1-4, pp.111-119 (1998).
Chu Chung Ming, et al., ABSTRACT, “Electrical properties and Crystal Structure of (Ba,Sr)TiO/sub 3/films prepared at Low Temperatures on LaNiO/sub 3/electrode by radio-frequency magnetron sputtering ”,Applied Physics Letter, vol. 70, No. 2, pp. 249-251 (Jan. 13, 1997).
Takeuchi, N., et al. ABSTRACT, Effect of Firing Atmosphere on the Cubic-Hexagonal Transition in Ba/sub 0.99/Sr/sub 0.91/TiO/sub 3/,Nippon seramikkusu Kyokai Gakujutsu Ronbunshi, vol. 8, No. 8, pp. 836-839 (1990).
Paek, S.H., et al., ABSTRACT, “Characterization of MIS Capacitor of BST Thin Film Deposited on Si by RF Magnetron Sputtering”,Material. Res. Soc., Pittsburgh, PA,Ferroelectric Thin Films V. Symp., pp. 33-38 (Apr. 7, 1996).
Yamaguchi, H., et al., ABSTRACT, Reactive Coevap

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