Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-20
2005-09-20
Brewster, William M. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S308000, C257S534000
Reexamination Certificate
active
06946701
ABSTRACT:
A process for fabricating a crown-cell capacitor in a memory integrated circuit. The process includes the step of forming a transistor having a contact region353at a surface of a semiconductor substrate300. The transistor, with the exception of the contact region, is covered with a first material362, 366and the first material and the contact region are then covered with a layer of a second material370. The portion of the second layer covering the contact region is removed to expose the contact region so that the removal of the portions of the second layer forms a cavity characterized by a bottom formed of the first material and sides formed of the second material. Further steps in the process include forming a first conductive layer372in the cavity to contact the contact region and conform to the bottom and sides, forming a dielectric layer376over the first conductive layer, and forming a second conductive layer378over the dielectric layer.
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Brady W. James
Brewster William M.
Hoel Carlton H.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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