Straddled gate FDSOI device

Details Straddled gate FDSOI device Straddled gate FDSOI device

2005-05-03

2005-05-03

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S349000, C257S350000, C257S387000, C257S412000

Reexamination Certificate

active

06888198

ABSTRACT:
A straddled gate device, and a method of producing such device, formed on a semiconductor-on-insulator (SOI) substrate having active regions defined by isolation regions and an insulator layer. The device includes a first gate defining a first channel region interposed between a source and a drain formed within the active region of the SOI substrate. Additionally, the device includes a second gate straddling the first gate defining second channel regions interposed between the first channel region and the source and the drain. Further still, the device includes a contact connecting the first gate with the second gate wherein when the device is in the off state (Ioff) the first channel region and second channel regions define a long channel and when the device is in the on state (Ion) the first channel region defines a short channel.

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