Process for manufacturing thin film transistor on unannealed...

Details Process for manufacturing thin film transistor on unannealed... Process for manufacturing thin film transistor on unannealed...

2005-03-01

2005-03-01

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S166000

Reexamination Certificate

active

06861299

ABSTRACT:
Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.

REFERENCES:
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 6165876 (2000-12-01), Yamazaki et al.
patent: 6228751 (2001-05-01), Yamazaki et al.
patent: 6335540 (2002-01-01), Zhang
patent: 6348367 (2002-02-01), Ohtani et al.
patent: 6506636 (2003-01-01), Yamazaki et al.
patent: 6706572 (2004-03-01), Yamazaki et al.
patent: 07066426 (1995-03-01), None
patent: 8-195494 (1996-07-01), None
patent: 09080483 (1997-03-01), None
patent: 10-261801 (1998-09-01), None
patent: 2000138379 (2000-05-01), None
patent: 2000-164885 (2000-06-01), None

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