Semiconductor device that include silicide layers

Details Semiconductor device that include silicide layers Semiconductor device that include silicide layers

2005-04-19

2005-04-19

Niebling, John F. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S755000, C438S149000, C438S151000, C438S682000

Reexamination Certificate

active

06882018

ABSTRACT:
There is disclosed a method of fabricating TFTs having reduced interconnect resistance by having improved contacts to source/drain regions. A silicide layer is formed in intimate contact with the source/drain regions. The remaining metallization layer is selectively etched to form a contact pad or conductive interconnects.

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Office Action (Application No. 08-307443) with partial translation, Oct. 5, 2004, 7 pages.

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