Magnetic random access memory (MRAM) devices having...

Details Magnetic random access memory (MRAM) devices having... Magnetic random access memory (MRAM) devices having...

2005-09-13

2005-09-13

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S158000

Reexamination Certificate

active

06943420

ABSTRACT:
MRAM devices include an MRAM substrate having a face, elongated main magnetic resistors that extend along the face and elongated reference magnetic resistors that extend along the face nonparallel to the elongated main magnetic resistors. The elongated reference magnetic resistors may extend along the face orthogonal to the elongated main magnetic resistors. The elongated main magnetic resistors may be configured to have a maximum resistance or a minimum resistance, and the elongated reference magnetic transistors may be configured to have resistance midway between the maximum resistance and the minimum resistance.

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Durlam et al.,A low power 1Mbit MRAM based on 1T1MTJ bit cell integrated with Copper Interconnects, 2002 Symposium on VLSI Circuits Digest of Technical Papers, 2002, pp. 158-161.
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