Ferroelectric memory and method of fabricating the same

Details Ferroelectric memory and method of fabricating the same Ferroelectric memory and method of fabricating the same

2005-07-12

2005-07-12

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27071, C257SE27104, C365S145000, C365S189040, C365S226000

Reexamination Certificate

active

06917063

ABSTRACT:
A ferroelectric memory includes a substrate and a sheet-shaped device formed over the substrate through an adhesive layer. The sheet-shaped device includes a memory cell array in which a ferroelectric layer is disposed at least in intersecting regions of a plurality of lower electrodes and a plurality of upper electrodes which are formed in the shape of lines, and a peripheral circuit section for the memory cell array.

REFERENCES:
patent: 6717837 (2004-04-01), Hasegawa et al.
patent: 2003/0057423 (2003-03-01), Shimoda et al.
patent: A 7-202052 (1995-08-01), None
patent: A 11-74533 (1999-03-01), None
patent: A 2000-91656 (2000-03-01), None
patent: A 2001-168294 (2001-06-01), None
patent: A 2002-26282 (2002-01-01), None
patent: A 2002-217391 (2002-08-01), None

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