Semiconductor light emitting devices

Details Semiconductor light emitting devices Semiconductor light emitting devices

2005-01-25

2005-01-25

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

Reexamination Certificate

active

06847057

ABSTRACT:
A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

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