Boosting circuit in semiconductor memory device

Details Boosting circuit in semiconductor memory device Boosting circuit in semiconductor memory device

2005-03-08

2005-03-08

Mai, Son (Department: 2818)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S189110, C327S589000, C327S321000

Reexamination Certificate

active

06865118

ABSTRACT:
The Disclosed is a boosting circuit. A boosting voltage (VBOOT) is rapidly increased to a given voltage level in two steps by using a preboosting circuit unit and a bootstrap circuit unit. The boosting voltage (VBOOT) is dropped through a clamp circuit unit to generate a final target voltage. Therefore, it is possible to make fast read access time in a read operation, minimize consumption of current and generate a stabilized word line voltage (W/L).

REFERENCES:
patent: 5673225 (1997-09-01), Jeong et al.
patent: 5940333 (1999-08-01), Chung
patent: 6084800 (2000-07-01), Choi et al.

Affiliated with

Also associated with

Rating

Boosting circuit in semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Boosting circuit in semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Boosting circuit in semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3415964