Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-05
2005-04-05
Ngo, Ngan V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C257S296000
Reexamination Certificate
active
06876038
ABSTRACT:
Thin-film transistors constituting a liquid crystal module have a channel forming region that is a crystal structural body in which a plurality of rod-like or flat-rod-like crystals are arranged in a particular direction. In the thin-film transistors, deteriorations in device characteristics due to hot carrier injection or the like can be prevented effectively when the temperature is in a range of 80° C.-250° C. (preferably 100° C.-200° C.). Therefore, a projection TV that is very high in reliability can be realized.
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Ohtani et al., “LP-B: Late-News Poster: A 60-in. HDTV Rear-Projector with Continuous-Grain Silicon Technology,” May 17-22, 1998, pp. 467-470, SID 98 Digest, International Symposium Digest of Technical Papers, vol. XXIX.
Hayakawa Masahiko
Ohtani Hisashi
Yamazaki Shunpei
Ngo Ngan V.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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