Electrically programmable resistance cross point memory...

Details Electrically programmable resistance cross point memory... Electrically programmable resistance cross point memory...

2005-03-01

2005-03-01

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000

Reexamination Certificate

active

06861687

ABSTRACT:
Resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes. A bit region located within the active layer at the cross point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. Memory circuits are provided to aid in the programming and read out of the bit region.

REFERENCES:
patent: 5508953 (1996-04-01), Fukuda et al.
patent: 5872355 (1999-02-01), Hueschen
patent: 6204139 (2001-03-01), Liu et al.

Affiliated with

Also associated with

Rating

Electrically programmable resistance cross point memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrically programmable resistance cross point memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrically programmable resistance cross point memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3414848