Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-06
2005-09-06
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S365000, C438S283000, C438S379000
Reexamination Certificate
active
06940132
ABSTRACT:
A semiconductor device includes a semiconductor substrate having a first major surface and a second major surface, source and drain layers formed in the first major surface, a gate insulating film formed on the first major surface, a gate layer formed on the gate insulating film, a source electrode formed on the first major surface and electrically connected to the source layer, a drain electrode formed on the first major surface, electrically connected to the drain layer, and having a second isolation portion, a gate electrode formed on the first major surface, electrically connected to the gate layer, and having a first isolation portion, a first capacitance adjusting electrode formed on the gate insulating film and having a first capacitance adjusted by the first isolation portion, and a second capacitance adjusting electrode formed on the gate insulating film and having a second capacitance adjusted by the second isolation portion.
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Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Thomas Toniae M.
Wilczewski Mary
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