Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-19
2005-07-19
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C438S003000
Reexamination Certificate
active
06919593
ABSTRACT:
A ferroelectric capacitor having a ferroelectric film is formed on a conductive silicon substrate. The dielectric capacitor is covered with a first diffusion barrier film, and a second interlayer insulating film is formed on the first diffusion barrier film. A first metal wiring is formed on the second interlayer insulating film, and the first metal wiring is covered with a first buffer film. A second diffusion barrier film is formed on the first buffer film, and a third interlayer insulating film is formed on the second diffusion barrier film. A second metal wiring is formed on the third interlayer insulating film, and the second metal wiring is covered with a second buffer film. A third diffusion barrier film is formed on the second buffer film.
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