Split-gate type nonvolatile memory devices

Details Split-gate type nonvolatile memory devices Split-gate type nonvolatile memory devices

2005-07-05

2005-07-05

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S317000, C257S319000, C257S320000, C257S321000, C257S322000

Reexamination Certificate

active

06914290

ABSTRACT:
The nonvolatile memory device includes an electrically programmable transistor and a selection transistor. The selection transistor is connected between the electrically program transistor and a programmable voltage supply line. The selection transistor controls application of a voltage on the program voltage supply line to the electrically programmable transistor.

REFERENCES:
patent: 5045488 (1991-09-01), Yeh
patent: 5812452 (1998-09-01), Hoang
patent: 5936883 (1999-08-01), Kurooka et al.
patent: 6284601 (2001-09-01), Hoang

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