Method of making contact regions for narrow trenches in semicond

Details Method of making contact regions for narrow trenches in semicond Method of making contact regions for narrow trenches in semicond

1994-07-22

1997-04-22

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438975, 438666, 438430, H01L 21302

Patent

active

056228902

ABSTRACT:
A contact region for a trench in a semiconductor device and a method for electrically contacting the conductive material in a trench that is too narrow for conventional electrical contacts may include a contact region in which the trench is divided into two or more trench sections, each section having the same narrow width as the undivided trench. The two or more trench sections are separated by one or more islands that are isolated from the semiconductor device. An aperture through the material above the contact region provides access for electrically contacting the conductive material in the trench sections.

REFERENCES:
patent: 4845051 (1989-07-01), Cogan et al.
patent: 5034346 (1991-07-01), Alter et al.
patent: 5057895 (1991-10-01), Beasom
patent: 5196373 (1993-03-01), Beasom
patent: 5248894 (1993-09-01), Beasom
patent: 5275974 (1994-01-01), Ellul et al.

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