Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-04-19
2005-04-19
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S643000
Reexamination Certificate
active
06881669
ABSTRACT:
An epitaxial barrier material provides not only a unique growth medium for growing single crystal structures of elemental metal thereon, but also provides an effective diffusion barrier at extremely thin thicknesses against migration of atoms from the metallization layer into an adjacent semiconductor substrate or low dielectric insulation layer. This invention is particularly advantageous for forming single crystal, transition metal conductor lines, contacts, filled trenches, and/or via plugs, and especially conductor structures based on transition metals of copper, silver, gold, or platinum. These metals are highly attractive for interconnect strategies on account of there respective low resistivity and high reliability characteristics. Processes for making the barrier film in a semiconductor device are also covered. The capability to use copper interconnect strategies coupled with the proviso of an extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.
REFERENCES:
patent: 3642526 (1972-02-01), Itoh et al.
patent: 3784402 (1974-01-01), Reedy, Jr.
patent: 4291327 (1981-09-01), Tsang
patent: 4368098 (1983-01-01), Manasevit
patent: 4550331 (1985-10-01), Milano
patent: 4692993 (1987-09-01), Clark et al.
patent: 4765845 (1988-08-01), Takada et al.
patent: 4847666 (1989-07-01), Heremans et al.
patent: 4915746 (1990-04-01), Welsch
patent: 4983535 (1991-01-01), Blanchard
patent: 4996584 (1991-02-01), Young et al.
patent: 5036017 (1991-07-01), Noda
patent: 5084417 (1992-01-01), Joshi et al.
patent: 5124762 (1992-06-01), Childs et al.
patent: 5135808 (1992-08-01), Kimock et al.
patent: 5151168 (1992-09-01), Gilton et al.
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5225031 (1993-07-01), McKee et al.
patent: 5225561 (1993-07-01), Kirlin et al.
patent: 5232872 (1993-08-01), Ohba
patent: 5248633 (1993-09-01), Morar et al.
patent: 5280012 (1994-01-01), Kirlin et al.
patent: 5352917 (1994-10-01), Ohmi
patent: 5378905 (1995-01-01), Nakamura
patent: 5387459 (1995-02-01), Hung
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5400739 (1995-03-01), Kao et al.
patent: 5435264 (1995-07-01), Santiago et al.
patent: 5453494 (1995-09-01), Kirlin et al.
patent: 5482003 (1996-01-01), McKee et al.
patent: 5498909 (1996-03-01), Hasunuma et al.
patent: 5569538 (1996-10-01), Cho
patent: 5593951 (1997-01-01), Himpsel
patent: 5625204 (1997-04-01), Kao et al.
patent: 5637533 (1997-06-01), Choi
patent: 5661345 (1997-08-01), Wada et al.
patent: 5670420 (1997-09-01), Choi
patent: 5677572 (1997-10-01), Hung et al.
patent: 5690737 (1997-11-01), Santiago et al.
patent: 5695810 (1997-12-01), Dubin et al.
patent: 5696018 (1997-12-01), Summerfelt et al.
patent: 5753040 (1998-05-01), Cho
patent: 5773085 (1998-06-01), Inoue et al.
patent: 5773359 (1998-06-01), Mitchell et al.
patent: 5824590 (1998-10-01), New
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5920080 (1999-07-01), Jones
patent: 5930669 (1999-07-01), Uzoh
patent: 5932006 (1999-08-01), Santiago et al.
patent: 5933753 (1999-08-01), Simon et al.
patent: 5955785 (1999-09-01), Gardner et al.
patent: 5965810 (1999-10-01), Holbrook
patent: 5968847 (1999-10-01), Ye et al.
patent: 6077774 (2000-06-01), Hong et al.
patent: 6077775 (2000-06-01), Stumborg et al.
patent: 6083818 (2000-07-01), Stumborg et al.
patent: 6120844 (2000-09-01), Chen et al.
patent: 6139905 (2000-10-01), Chen et al.
patent: 6144050 (2000-11-01), Stumborg et al.
patent: 6211066 (2001-04-01), Stumborg et al.
patent: 6291876 (2001-09-01), Stumborg et al.
patent: 6566247 (2003-05-01), Stumborg et al.
patent: 20010035581 (2001-11-01), Stumborg et al.
patent: 20020153610 (2002-10-01), Stumborg et al.
patent: 851483 (1998-07-01), None
patent: 881673 (1998-12-01), None
patent: 402143531 (1990-06-01), None
patent: 2-266569 (1990-10-01), None
patent: 6-164004 (1994-06-01), None
patent: 6-310509 (1994-11-01), None
patent: WO 0011731 (2000-03-01), None
Chaudhari et al., “Calcium Fluoride thin films on GaAs(100) for possible metal-insulator-semiconductor applications”, Appl. Phys. lett., vol. 62, No. 8, Feb. 22, 1993, pp. 852-854.
Colbow et al., “Photoemission study of the formation of SrF2/GaAs(100) and BaF2/GaAs(100) interfaces”, Physical Review B, vol. 49, No. 3, Jan. 15, 1994, pp. 1750-1756.
Chu et al., “The Role of Barium in the Heteroepitaxial Growth of Insulator and Semiconductors on Silicon”, Mat. Res. Soc. Symp. Proc., vol. 334, 1994, pp. 501-506.
Stumborg et al., “Determination of growth mechanisms of MBE grown BaF2on Si(100) by target angle dependence of RBS yields”, Nucl. Instr. And Methods in Physics Res. B, vol. 95, 1995, pp. 319-322.
Stumborg et al., “Growth and interfacial chemistry of insulating (100) barium fluoride on gallium arsenide”, J. Appl. Phys., vol. 77, No. 6, Mar. 15, 1995, pp. 2739-2744.
Stumborg et al., “Surface chemical state populations in the molecular beam epitaxy deposition of BaF2on GaAs by x-ray photoelectron spectroscopy and heavy-ion backscattering spectroscopy”, J. Vac. Sci, Technol., vol. 14, No. 1, Jan./Feb. 1996, pp. 69-79.
Chu et al., “Heteroepitaxial deposition of Group IIa fluorides on gallium arsenide”, Mat. Sci. and Eng., vol. B47, 1997, pp. 224-234.
D. Gardner et al., “Encapsulated Copper Interconnection Devices using Sidewall Barriers”, Proc. 8thInt'l IEEE VLSI MVIC, Jun. 1991, pp. 99-108.
T. Wade, “Gas Dome Dielectric System Provides Unity-k Dielectric”, Semiconductor Int'l, Jul. 1999, 6 pages total.
Abe et al., “Metal Base Transistor of In/Bi (Ba,Rb)O3/SrTiO3(Nb)”, IEEE, vol. 14, Mar. 1993, pp. 100-102.
S. M. Sze, “Semiconductor Devices Physics and Technology”, 1985, pp. 208-210.
Truscott et al., “MBE growth of BaF2/(Ga,In)(As,Sb)Structures”, Journal of Crystal Growth, vol. 81 (1987), pp. 552-556.
Clemens et al., “Growth of BaF2and of BaF2/SrF2layers on (001) oriented GaAs”, J.Appl. Phys., vol. 66, No. 4, Aug. 15, 1989, pp. 1680-1685.
Hung et al., “Epitaxial growth of alkaline earth fluoride films on HF-treated Si and (NH4)2Sx-treated GaAs without in situ cleaning”, Appl. Phys. Lett., vol. 60, No. 2, Jan. 13, 1992, pp. 201-203.
Vogt et al., “Dielectric Barriers for Cu Metallization Systems”,Materials for Advanced Metallization, MAM '97, pp 51-52, 1998.
“Electrically reprogrammable FAMOS structure,” IBM Technical Disclosure Bulletin, Mar. 1, 1973, vol. 15, Issue 10, pp. 3264-3266.
Murarka—“Multilevel interconnections for ULSI and GSI era,” Materials Science and Engineering, R19 (1997), pp. 87-151.
Murarka—“Diffusion Barriers—for Thin Film Metallizations,” Defect and Diffusion Forum, vol. 59 (1998), pp. 99-110.
Boulais Kevin A.
Chu Tak Kin
Santiago Francisco
Bechtel, Esq. James B.
Boalick, Esq. Scott R.
Bussan, Esq. Matthew J.
Kielin Erik
The United States of America as represented by the Secretary of
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