Self-aligned source pocket for flash memory cells

Details Self-aligned source pocket for flash memory cells Self-aligned source pocket for flash memory cells

2005-03-08

2005-03-08

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S315000, C257S316000, C257S317000, C257S320000, C257S321000, C257S390000, C257S391000

Reexamination Certificate

active

06864523

ABSTRACT:
An improved method for forming a flash memory is disclosed. A self-aligned source implanted pocket located underneath and around the source line junction is formed after the field oxide between adjacent word lines is removed, and before or after the self-aligned source doping is carried out, so that the configuration of the implanted boron follows the source junction profile.

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