Magnetoresistive random access memory device

Details Magnetoresistive random access memory device Magnetoresistive random access memory device

2005-07-05

2005-07-05

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S207000, C365S210130

Reexamination Certificate

active

06914808

ABSTRACT:
In an MRAM, a plurality of magnetic memory cells are arranges in rows and columns. Each of the plurality of magnetic memory cells is a magnetoresistive element having a tunnel magnetoresistive effect. Each of the plurality of magnetic memory cells includes two magnetoresistive elements that hold data items of opposite logic levels to each other and are connected in series.

REFERENCES:
patent: 5946227 (1999-08-01), Naji
patent: 5986925 (1999-11-01), Naji et al.
patent: 6621729 (2003-09-01), Garni et al.
patent: 2002-25245 (2002-01-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Feb. 2000, 8 pages.
M. Durlam, et al., “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements”, IEEE International Soilid-State Circuits Conference, Digest of Technical Papers, Feb. 2000, 7 pages.
Peter K. Naji, et al., “A 256kb 3.0V 1T1MTJ Nonvolatile Magnetoressistive RAM”, IEEE International Solid-State Circuits Conference, Digest of Technical Papers, Feb. 2001, 9 pages.
Kouichi Yamada, et al., “A Novel Sensing Scheme for a MRAM with a 5% MR Ratio”, Symposium of VLSI Circuits Digest of Technical Papers, Session C12-1, Jun. 2001, 2 Pages.

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