Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-10
2005-05-10
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S340000, C257S341000, C257S386000, C257S659000
Reexamination Certificate
active
06891223
ABSTRACT:
Transistor configurations have trench transistor cells disposed along trenches in a semiconductor substrate with two or more electrode structures disposed in the trenches, and also metallizations are disposed above a substrate surface of the semiconductor substrate. The trenches extend into an inactive edge region of the transistor configuration and an electrically conductive connection between the electrode structures and corresponding metallizations are provided in the edge region.
REFERENCES:
patent: 5283201 (1994-02-01), Tsang et al.
patent: 6150675 (2000-11-01), Franke et al.
patent: 6580123 (2003-06-01), Thapar
patent: 6690062 (2004-02-01), Henninger et al.
Henninger Ralf
Hirler Franz
Krumrey Joachim
Pölzl Martin
Rieger Walter
Greenberg Laurence A.
Locher Ralph E.
Munson Gene M.
Stemer Werner H.
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