Apparatus for feedback using a tunnel device

Static information storage and retrieval – Floating gate – Particular connection

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S189070, C365S189090, C365S207000

Reexamination Certificate

active

06847551

ABSTRACT:
An apparatus for using feedback to set a floating gate to a desired voltage during a set mode is disclosed. The apparatus includes a floating gate, a first and second tunnel device formed respectively between the floating gate and a first and second electrode, a first circuit coupled to the floating gate for comparing the voltage on the floating gate to a third voltage and for generating an output voltage at an output terminal, and a feedback circuit coupled between the output terminal and the floating gate. The feedback circuit includes the first tunnel device and a third tunnel device for causing the floating gate voltage to be modified as a function the output voltage until the floating gate voltage, the third voltage and the output voltage are approximately equal.

REFERENCES:
patent: 4935702 (1990-06-01), Mead et al.
patent: 4953928 (1990-09-01), Anderson et al.
patent: 4980859 (1990-12-01), Guterman et al.
patent: 5059920 (1991-10-01), Anderson et al.
patent: 5095284 (1992-03-01), Mead
patent: 5166562 (1992-11-01), Allen et al.
patent: 5875126 (1999-02-01), Minch et al.
patent: 5903487 (1999-05-01), Wu et al.
patent: 5986927 (1999-11-01), Minch et al.
patent: 6297689 (2001-10-01), Merrill
patent: 6515903 (2003-02-01), Le et al.
Fowler, et al., “Electron Emission in Intense Electric Fields”, Royal Soc. Proc.,A, vol. 119 (1928).
Lenzlinger, et al., “Fowler-Nordheim Tunneling Into Thermally Grown SiO2”, Applied Physics, Vo. 40, No. 1 (Jan. 1969).
Carley, “Trimming Analog Circuits Using Floating-Gate Analog MOS Memory”, IEEE Journal of Solid-State Circuits, vol. 24, No. 6 (Dec. 1989).
Hasler, et al. “Adaptive Circuits Using pFET Floating-Gate Devices”, pp. 1-15 (undated).
Figueroa, et al., “A Floating-Gate Trimmable High Resolution DAC in Standard 0.25μm CMOS”, Nonvolatile Semiconductor Memory Workshop, pp. 46-47 (Aug. 2001).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus for feedback using a tunnel device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus for feedback using a tunnel device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for feedback using a tunnel device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3410760

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.