Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-03-01
2005-03-01
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S296000
Reexamination Certificate
active
06861334
ABSTRACT:
A dielectric film is formed by atomic layer deposition to conformally fill a narrow, deep trench for device isolation. The method of the illustrated embodiments includes alternately pulsing vapor-phase reactants in a string of cycles, where each cycle deposits no more than about a monolayer of material, capable of completely filling high aspect ratio trenches. Additionally, the trench-fill material composition can be tailored by processes described herein, particularly to match the coefficient of thermal expansion (CTE) to that of the surrounding substrate within which the trench is formed. Mixed phases of mullite and silica have been found to meet the goals of device isolation and matched CTE. The described process includes mixing atomic layer deposition cycles of aluminum oxide and silicon oxide in ratios selected to achieve the desired composition of the isolation material, namely on the order of 30% alumina and 70% silicon oxide by weight.
REFERENCES:
patent: 4058430 (1977-11-01), Suntola et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 20010006839 (2001-07-01), Yeo
patent: 20020031618 (2002-03-01), Sherman
patent: WO 9617107 (1996-06-01), None
J.M. Hergenrother et al., 50 nm Vertical Replacement-Gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 Gate Dielectrics. IEDM 2001, pp. 51-54.*
Dücsö, C. et al., Research Institute for materials Science—ATKI, H-1525 Budapest, Hungary, Ultrialnen, M. et al., Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, FIN-02150 Espoo, Finland, “Deposition of Tin Oxide into Porous Silicon by Atomic Layer Epitaxy,”J. Electrochemical Society, vol. 143, No. 2, pp. 683-687 (1996).
Horike, Y. et al., “Filling of Si oxide into a deep trench using digital CVD method,”Applied Surface Science, vol. 46, pp. 168-174 (1990).
“SOI Technology: IBM's Next Advance In Chip Design,” World wide web address: chips.ibm.com/bluelogic/showcase/soi/soipaper.pdf pp. SOI 1-SOI 10.
Kaizuke, T. et al., “Conformal Chemical Vapor Deposition TiN(111) Film Formation as an Underlayer of Al for Highly Reliable Interconnects,”Jpn. J. Appl. Phys., vol. 33, Part 1, No. 1B, pp. 470-474 (1994).
Kukil, K. et al., Atomic Layer Epitaxy Growth of Tantalum Oxide Thin Films from Ta(OC2H5)5and H2O,J. Electrochem. Soc., vol. 142, No. 5, pp. 1670-1674 (1995).
Lee, William E. D Phil. et al., Department of Engineering Materials and Sorby Centre for Electron Microscopy, Sheffield University, Sheffield, UK.,Ceramic Microstructures. Property control by processing, Chapman & Hall publishers, p. 297 (1994).
Min, Jae-Sik et al., “Atomic Layer Deoposition of TiN Thin Films by Sequential Introduction of Ti Precursor and NH3,”Mat. Res. Soc. Symp. Proc., vol. 514, pp. 337-342 (1998).
Min, Jae-Sik et al., “Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis (ethylmethylamino)-Titanium and Ammonia,”Jpn. J. Appl. Phys., vol. 37, Pt. 1, No. 9A, pp. 4999-5004 (1998).
Niinistö, L. et al., “synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications,”Materials Science and Engineering, vol. B41, pp. 23-29 (1996).
Ott, A.W. et al., “Modification of Porous Alumina Membranes Using Al2O3 Atomic Layer Controlled Deposition,”Chem. Mater., vol. 9, No. 3, pp. 707-714 (1997).
Titala, M. et al., “Atomic Layer Epitaxy Growth of TiN Thin Films from Til4and NH3,”J. Electrochem. Soc., vol. 145, No. 8, pp. 2914-2920 (1998).
Ritala, M. et al., “Couumincations. Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition,”Chemical Vapor Deposition, vol. 5, No. 1, pp. 7-9 (1999).
Sakaue, H. et al., “Digital Chemical Vapor Deposition of SiO2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation,”Japanese Journal of Applied Physics, vol. 30, No. 1B, pp. L 124-L 127 (1990).
Sneh, O. et al., “Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence,”Surface Science, vol. 334, pp. 135-152 (1995).
Suntola, T., “Atomic Layer Epitaxy,”Handbook of Crystal Growth 3. Thin Films and Epitaxy. Part B: Growth Mechanisms and Dynamics, D.T.J. Hurle editor, Chapter 14, pp. 602-663 (1994).
Wise, M.L. et al., “Diethyldiethoxysilane as a New Precursor for SiO2Growth on Silicon,”Mat. Res. Soc. Symp. Proc., vol. 334, pp. 37-43 (1994).
Granneman Ernst H. A.
Raaijmakers Ivo
Soininen Pekka T.
ASM International N.V.
Duy Mai Anh
Knobbe Martens Olson & Bear LLP
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