Protection circuit for MOS components

Details Protection circuit for MOS components Protection circuit for MOS components

2005-04-19

2005-04-19

Williams, Alexander Oscar (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S355000, C257S630000, C257S356000, C257S529000, C257S528000, C257S532000, C324S750010, C455S083000, C363S126000, C333S104000, C330S310000

Reexamination Certificate

active

06882014

ABSTRACT:
A protection circuit for MOS components. In the protection circuit, a bypass PMOS transistor has a gate, a source and a substrate, all coupled to a first voltage node and a drain coupled to a gate of a MOS component. A bypass NMOS transistor has a gate, a source and a substrate, all coupled to a second voltage node and a drain coupled to the gate of the MOS component. When positive charges are accumulated on the gate of the MOS component due to an antenna effect, the bypass PMOS transistor dissipates the positive charges to the first voltage node. On the contrary, when negative charges are accumulated on the gate of the MOS component due to antenna effect, the bypass NMOS transistor dissipates the negative charges to the second voltage node.

REFERENCES:
patent: 4929887 (1990-05-01), Robitaille et al.
patent: 6537883 (2003-03-01), Chen et al.
patent: 20020153593 (2002-10-01), Chen et al.

Affiliated with

Also associated with

Rating

Protection circuit for MOS components does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Protection circuit for MOS components, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Protection circuit for MOS components will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3409843