Electrostatic discharge protection circuit with high...

Details Electrostatic discharge protection circuit with high... Electrostatic discharge protection circuit with high...

2005-01-18

2005-01-18

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000

Reexamination Certificate

active

06844595

ABSTRACT:
An ESD protection circuit comprising a substrate having a first conductivity type, a well region having a second conductivity type, a first doping region having the first conductivity type, and a second doping region having the second conductivity type. The substrate is coupled to the reference potential, the well region is formed on the substrate and electrically coupled to the node, the first doping region is electrically floated on the surface of the well region, and the second doping region is disposed on the substrate and electrically coupled to the reference potential. Moreover, the electrostatic discharge current of the node provides a voltage with sufficient magnitude to breakdown the conjunction interface between the well region and the substrate, also triggering a BJT comprising the well region, substrate and the second doping region for dissipating the electrostatic discharge current. The first doping region, when its electrostatic discharge current is greater than a predetermined current, reduces the potential difference between the node and the reference potential.

REFERENCES:
patent: 4153909 (1979-05-01), Dobkin
patent: 5869873 (1999-02-01), Yu
patent: 6114731 (2000-09-01), London
patent: 6215135 (2001-04-01), Schroder
patent: 6281554 (2001-08-01), Pan
patent: 6455898 (2002-09-01), Liu et al.
patent: 6476422 (2002-11-01), Yu
patent: 405121685 (1993-05-01), None

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