Process for forming shallow trench isolation region with...

Details Process for forming shallow trench isolation region with... Process for forming shallow trench isolation region with...

2005-05-31

2005-05-31

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C438S690000, C438S691000

Reexamination Certificate

active

06900112

ABSTRACT:
A process for forming shallow trench isolation region with corner protection layer. A protection layer is formed within the opening that defines the isolation trench as part of the etching mask such that the etching rate of the protection layer is less than the mask layer and the pad insulating layer to the etchant used to remove the mask layer and pad insulating layer. The protection layer is partially removed and left adjacent to the shallow trench isolation region as a corner protection layer after removing the mask layer and pad insulating layer. Thus, the indentation next to the corner of the isolation region is avoided.

REFERENCES:
patent: 5863827 (1999-01-01), Joyner
patent: 5940716 (1999-08-01), Jin et al.
patent: 6358818 (2002-03-01), Wu
patent: 6518145 (2003-02-01), Alsmeier et al.
patent: 6518148 (2003-02-01), Cheng et al.

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