Reducing the effects of néel coupling in MRAM structures

Details Reducing the effects of néel coupling in MRAM structures Reducing the effects of néel coupling in MRAM structures

2005-05-31

2005-05-31

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257S421000, C365S171000, C365S173000, C365S158000

Reexamination Certificate

active

06900489

ABSTRACT:
A magnetic memory element has reduced Néel coupling between a pinned layer and a free layer. The magnetic memory element includes a first pinned ferromagnet and a free ferromagnet which are separated by a barrier layer. The magnetic field direction of the pinned layer is fixed, for example, by an antiferromagnetic exchange layer. An additional ferromagnetic layer, provided in coupling relationship with the first pinned ferromagnet, offsets Néel coupling between the free ferromagnetic layer and the first pinned ferromagnet.

REFERENCES:
patent: 5764567 (1998-06-01), Parkin
patent: 6466419 (2002-10-01), Mao
patent: 6714444 (2004-03-01), Huai et al.
patent: 2002/0030489 (2002-03-01), Lenssen et al.
patent: 2002/0141120 (2002-10-01), Gill

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