Single-poly EPROM and method for forming the same

Details Single-poly EPROM and method for forming the same Single-poly EPROM and method for forming the same

2005-07-12

2005-07-12

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000

Reexamination Certificate

active

06917070

ABSTRACT:
A single-poly EPROM and method for forming the same. The single-poly EPROM has an isolation region disposed in a substrate to define a striped active area. A deep n-well is located under the isolation region and the striped active area. A gate oxide layer is disposed on the substrate at the striped active area. A pair of striped selective gates perpendicular to the striped active area are disposed on the gate oxide layer and the isolation region. A pair of islanded floating gates are disposed on the gate oxide layer at the active area, with a gap between the pair of floating gates and the pair of selective gates. A striped p-well is disposed in the deep n-well between the pair of selective gates and below the pair of selective gates and portions of the pair of floating gates. A pair of sources are disposed on both sides of the p-well, and connected to each other through the deep n-well. A drain is disposed in the p-well between the pair of selective gates.

REFERENCES:
patent: 5364806 (1994-11-01), Ma et al.
patent: 6103573 (2000-08-01), Harari et al.
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6146945 (2000-11-01), Osanai
patent: 6326265 (2001-12-01), Liu et al.
patent: 6512263 (2003-01-01), Yuan et al.
patent: 2002/0110020 (2002-08-01), Lin et al.

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