Electro-static discharge protection circuit and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S301000, C257S355000, C438S242000, C438S243000, C438S306000

Reexamination Certificate

active

06943396

ABSTRACT:
As disclosed herein, an electrostatic discharge (ESD) protection circuit is provided for an integrated circuit including a semiconductor substrate. The ESD protection circuit includes a plurality of active devices formed in the semiconductor substrate, the active devices being formed by a process including a plurality of steps carried out to form, at the same time, a plurality of active devices having a function other than ESD protection. For example, the ESD circuit may include an array of vertical transistors formed according to a process including many of the steps used to form, at the same time, vertical transistors of a DRAM array. Also disclosed is the formation of an ESD circuit in an “unusable” area of a semiconductor chip, such as under a bond pad, land or under bump metallization of the chip.

REFERENCES:
patent: 5182220 (1993-01-01), Ker et al.
patent: 5652689 (1997-07-01), Yuan
patent: 6157065 (2000-12-01), Huang et al.
patent: 6518616 (2003-02-01), Kudelka et al.
patent: 6777737 (2004-08-01), Mandelman et al.
patent: 2002/0196651 (2002-12-01), Weis

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