High voltage switch circuitry

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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Details

C365S096000, C365S225700, C257S050000, C257S530000, C257S529000

Reexamination Certificate

active

06901004

ABSTRACT:
The present invention relates to a high voltage switch used with a one-time programmable memory device and a method of setting a state of a one-time programmable memory device using such a high voltage switch. The memory device includes a plurality of one time programmable memory cells arranged in an array and adapted to be programmed using a high voltage, wherein each of the memory cells includes at least one storage element and two gated fuses connected to the storage element. A high voltage switch is connected to at least one of the memory cells and is adapted to switch in a high voltage.

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