Method for fabricating thin film transistors

Details Method for fabricating thin film transistors Method for fabricating thin film transistors

2005-01-11

2005-01-11

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S735000, C438S157000

Reexamination Certificate

active

06841475

ABSTRACT:
A method is disclosed for forming a thin film transistor. A photoresist layer is formed on top of the preliminary substrate. A portion of the photoresist layer is selectively removed in a single exposure process to form a photoresist pattern having a two-portion structure with a first portion having a first width and a second portion underneath the first portion with a second width. Such a photoresist pattern helps to reduce the number of mask processes used for forming the thin film transistor.

REFERENCES:
patent: 6479398 (2002-11-01), Chen et al.
patent: 20040089900 (2004-05-01), Ishikawa et al.
patent: 20040110327 (2004-06-01), Ishikawa

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