Semiconductor device

Details Semiconductor device Semiconductor device

2005-05-10

2005-05-10

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S331000

Reexamination Certificate

active

06891224

ABSTRACT:
A semiconductor device includes: a base layer of a first conductivity type, a barrier layer of a first conductivity type formed on the base layer, a well layer of a second conductivity type formed on the barrier layer; a trench formed from the surface of the well layer to such a depth as to reach a region in the vicinity of a junction surface between the barrier layer and the base layer, a gate electrode formed in the trench via a gate insulating film, a contact layer of the second conductivity type selectively formed in a surface portion of the well layer, a source layer of the first conductivity type selectively formed in the surface portion of the well layer so as to contact a side wall of the gate insulating film in the trench and the contact layer, and a first main electrode formed so as to contact the contact layer and the source layer, wherein assuming that a total sum of impurity densities in the region of the barrier layer between the trenches is Qn, the Qn has a relation of the following equation: Qn≧2×1012cm−2.

REFERENCES:
patent: 5751024 (1998-05-01), Takahashi
patent: 6001678 (1999-12-01), Takahashi
patent: 6040599 (2000-03-01), Takahashi
patent: 6221721 (2001-04-01), Takahashi
patent: 6359306 (2002-03-01), Ninomiya
patent: 6566691 (2003-05-01), Inoue
H. Takahashi, et al., Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, pp. 445-448, “600V CSTBT Having Ultra Low On-State Voltage”, 2001.

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