Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-15
2005-03-15
Tran, Minhloan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S327000, C257S321000, C257S331000
Reexamination Certificate
active
06867455
ABSTRACT:
A semiconductor device capable of holding multibit information in one memory cell, and a method of manufacturing the semiconductor device. A trench is formed in a channel portion of an MONOS transistor. Then, a source side portion and a drain side portion in a silicon nitride film of a gate insulating film which interpose the trench are caused to function as first and second electric charge holding portions capable of holding electric charges. In the case in which first electric charges are trapped on the drain side and second electric charges are trapped on the source side, a portion of a gate electrode in the trench functions as a shield. If a fixed potential is given to the gate electrode, the second electric charge holding portion is not influenced by an electric field induced by the first electric charges so that the trapping of the second electric charges is not inhibited.
REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6486028 (2002-11-01), Chang et al.
patent: 6713834 (2004-03-01), Mori et al.
patent: 5-75133 (1993-03-01), None
patent: 2000-260887 (2000-09-01), None
patent: 2002-26149 (2002-01-01), None
Ilan Bloom, et al., “NROM™—A New Non-Volatile Memory Technology: From Device to Products”, Microelectronic Engineering 59, 2001, pp. 213 -223.
Toshiyuki Toyoshima, et al., “0.1 μm Level Contact Hole Pattern Formation with KrF Lithography by Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACS)”, IEEE, IEDM, 1998, pp. 333-336.
J. De Blauwe, et al., “Si-Dot Non-Volatile Memory Device”, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials, Tokyo, 2001, pp. 518-519.
Boaz Eitan, et al., “Can NROM, A 2-Bit, Trapping Storage NVM Cell, Give a Real Challenge to Floating Gate Cells?”, Presented at the International Conference on Solid State Devices and Materials, Tokyo, 1999, pp. 1/3-3/3.
Eli Lusky, et al., “Electron Discharge Model of Locally-Trapped Charge in Oxide-Nitride-Oxide (ONO) Gates for NROM™ Non-Volatile Semiconductor Memory Devices”, Presented at the Solid State Device and Materials Conference (SSDM 2001), Sep. 2001, Tokyo, Japan, pp. 1-2.
Ajika Natsuo
Furuta Haruo
Itoh Yasuyoshi
Ueno Shuuichi
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
Tran Minhloan
Tran Tan
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