Semiconductor devices, and methods for same

Details Semiconductor devices, and methods for same Semiconductor devices, and methods for same

2005-05-03

2005-05-03

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S651000, C257S632000, C257S607000, C257S327000

Reexamination Certificate

active

06888204

ABSTRACT:
Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

REFERENCES:
patent: 3849204 (1974-11-01), Fowler
patent: 3923559 (1975-12-01), Sinha
patent: 4027380 (1977-06-01), Deal et al.
patent: 4113514 (1978-09-01), Pankove et al.
patent: 4151007 (1979-04-01), Levinstein et al.
patent: 4212100 (1980-07-01), Paivinen et al.
patent: 4239554 (1980-12-01), Yamazaki
patent: 4290825 (1981-09-01), Dearnaley et al.
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4352835 (1982-10-01), Holbrook et al.
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4542512 (1985-09-01), Van Den Beemt
patent: 4620211 (1986-10-01), Baliga et al.
patent: 4796081 (1989-01-01), Cheung et al.
patent: 4936781 (1990-06-01), Mircea et al.
patent: 4962065 (1990-10-01), Brown et al.
patent: 4992840 (1991-02-01), Haddad et al.
patent: 5059551 (1991-10-01), Chevallier et al.
patent: 5162892 (1992-11-01), Hayashi et al.
patent: 5179029 (1993-01-01), Gottscho et al.
patent: 5198880 (1993-03-01), Taguchi et al.
patent: 5248348 (1993-09-01), Miyachi et al.
patent: 5250446 (1993-10-01), Osawa et al.
patent: 5254506 (1993-10-01), Hori
patent: 5264724 (1993-11-01), Brown et al.
patent: 5320975 (1994-06-01), Cederbaum et al.
patent: 5434440 (1995-07-01), Yoshitomi et al.
patent: 5514628 (1996-05-01), Enomoto et al.
patent: 5571339 (1996-11-01), Ringel et al.
patent: 5693961 (1997-12-01), Hamada
patent: 5711998 (1998-01-01), Shufflebotham
patent: 5744202 (1998-04-01), Nickel
patent: 5822175 (1998-10-01), Azuma
patent: 5830575 (1998-11-01), Warren et al.
patent: 5864161 (1999-01-01), Mitani et al.
patent: 5872387 (1999-02-01), Lyding et al.
patent: 6023093 (2000-02-01), Gregor et al.
patent: 6147014 (2000-11-01), Lyding et al.
patent: 6328801 (2001-12-01), Gary et al.
patent: WO 9419829 (1994-09-01), None
Okazaki et al., “Characteristics of Sub-¼-μm Gate Surface Channel PMOSFET's Using a Multilayer Gate Structure of Boron-Doped Poly-Si on Thin Nitrogen-Doped Poly-Si,” IEEE Transactions of Electron Devices, vol. 41, No. 12, Dec. 1994, pp. 2369-2375.*
C.T. Sah, Models and Experiments on Degredation of Oxidized Silicon, 1990, Soild-State Electronics, vol. 33, No. 2, pp. 147-167.*
A. Uchiyama, H. Fukuda, T. Hayashi, T. Iwabuchi, S. Ohno “High Performance Dual-gate Sub-halfmicron CMOSFET's with 6nm-thick Nitrided SiO2 Films in an N2O Ambient”,IEDM Tech. Dig. 1990, pp. 16.6.1-16.6.4.
“Process Stability of Deuterium-Annealed MOSFET's,” W.F. Clark, et al., IEEE Electron Device Letters, vol. 20. No. 1, Jan. 1999, pp. 48-50.
“Defect Generation in Field-Effect Transistors Under Channel-Hot-Electron Stress,” D.J. DiMaria, Journal of Applied Physics, vol. 87, No. 12, Jun. 15, 2000, pp. 8707-8715.
Ph. Avouris, R.E. Walkup, A.R. Rossi, T.-C. Shen, G.C. Abeln, J.R. Tucker and J.W. Lyding, “STM-Induced H Atom Desorption From Si(100): Isotope Effects And Site Selectivity”,Chemical Physics Letters, vol. 257, pp. 148-154 (Jul. 19, 1996).
G. Ganguly and A. Matsuda, “Light-Induced Defect Densities In Hydrogenated And Deuterated Amorphous Silicon Deposited At Different Substrate Temperatures”,Am. Phys. Soc., vol. 49, No. 16, pp. 10 986-10 990 (Apr. 15, 1994).
I.P. Ipatova, O.P. Chikalova-Luzina and K. Hess, “Effect Of Localized Vibrations On The Si Surface Concentrations Of H And D”,J. Appl. Phys., vol. 83, No. 2, pp. 814-819 (Jan. 15, 1998).
J.W. Lyding, T.-C. Shen, G.C. Abeln, C. Wang, E.T. Foley and J.R. Tucker, “Silicon Nanofabrication And Chemical Modification By UHV-STM”,Mat. Res. Soc. Symp. Proc., vol. 380, pp. 187-197 (1995).
J.C. Mikkelsen, Jr., “Secondary Ion Mass Spectrometry Characterization Of D2O and H218O Stream Oxidation Of Silicon”,J. Electronic Mat., vol. 11, No. 3, pp. 541-558 (1982).
S.M. Myers and P.M. Richards, “Interactions Of Deuterium With Ion-Irradiated SiO2On Si”,J. Appl. Phys., vol. 67, No. 9, pp. 4064-4071 (May 1, 1990).
H. Park and C.R. Helms, “The Effect Of Annealing Treatment On The Distribution Of Deuterium In Silicon And In Silicon/Silicon Oxide Systems”,J. Electrochem. Soc., vol. 139, No. 7, pp. 2042-2046 (Jul. 1992).
N.S. Saks and R.W. Rendell, “The Time-Dependence Of Post-Irradiation Interface Trap Build-Up In Deuterium-Annealed Oxides”,IEEE Transactions On Nuclear Science, vol. 39, No. 6, pp. 2220-2229 (Dec. 1992).
N.S. Saks and R.W. Rendell, “Time-Depenence Of The Interface Trap Build-Up In Deuterium-Annealed Oxides After Irradiation”,Appl. Phys. Lett., vol. 61, No. 25, pp. 3014-3016 (Dec. 21, 1992).
T.-C. Shen, C. Wang, G.C. Abeln, J.R. Tucker, J.W. Lyding, Ph. Avouris and R.E. Walkup, “Atomic-Scale Desorption Through Electronic And Vibrational Excitation Mechanisms”,Science, vol. 268, pp. 1590-1592 (Jun. 16, 1995).
J.M. Zavada, B.L. Weiss, I.V. Bradley, B. Theys, J. Chevallier, R. Rahbi, R. Addinall, R.C. Newmann and H.A. Jenkinson, “Optical Waveguides Formed By Deuterium Passivation Of Acceptors In Si Doped p-Type GaAs Epilayers”,J. Appl. Phys., vol. 71, No. 9, pp. 4151-4155 (May 1, 1992).

Affiliated with

Also associated with

Rating

Semiconductor devices, and methods for same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor devices, and methods for same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor devices, and methods for same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3405639