Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-17
2005-05-17
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S335000
Reexamination Certificate
active
06894348
ABSTRACT:
An N+ buried diffusion region is formed between a P− silicon substrate and an N− epitaxial layer and a P+ buried diffusion region is formed between the N+ buried diffusion region and the N− epitaxial layer. An N diffusion region, a P diffusion region and an N diffusion region are formed in the surface for the N− epitaxial layer. The surface of the P+ buried diffusion region located, approximately, beneath the N diffusion region is recessed so as to go far away from the N diffusion region and a narrowed part is formed in this part. Thereby, in the OFF condition, the depletion layer further extends in the part where the narrowed part is formed. As a result, the withstanding voltage of the semiconductor device is increased.
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Flynn Nathan J.
McDermott Will & Emery LLP
Mitsubishi Denki & Kabushiki Kaisha
Mondt Johannes
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