Conductive semiconductor structures containing metal oxide...

Details Conductive semiconductor structures containing metal oxide... Conductive semiconductor structures containing metal oxide...

2005-07-12

2005-07-12

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S768000, C257S758000, C257S750000, C257S310000, C257S757000

Reexamination Certificate

active

06917112

ABSTRACT:
A method for forming a metal/metal oxide structure that includes forming metal oxide regions, e.g.. ruthenium oxide regions, at grain boundaries of a metal layer, e.g., platinum. Preferably, the metal oxide regions are formed by diffusion of oxygen through grain boundaries of the metal layer, e.g., platinum, to oxidize a metal layer thereon, e.g, ruthenium layer. The structure is particularly advantageous for use in capacitor structures and memory devices, such as dynamic random access memory (DRAM) devices.

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Sang Ho Oh, Chan Gyung Park, and Chanro Park, “Thermal Stability of RuO(2)/Ru Bilayer Thin Film in Oxygen Atmosphere,” Thin Solid Films, No. 359, (2000), pp. 118-123.
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Yoon et al., “Investigation of RuO2- Incorporated PT Layer as a Bottom Electrode and Diffusion Barrier for High Epsilon Capacitor Applications,”Electrochem. and Solid-State Lett.; 3(8): 373-376 (2000).

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