Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-07-26
2005-07-26
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S160000, C438S164000, C438S166000
Reexamination Certificate
active
06921685
ABSTRACT:
A method of fabricating a thin film transistor includes the steps of (a) forming an amorphous silicon film containing hydrogen therein, on a substrate composed of resin, and (b) irradiating laser beams to the amorphous silicon film at an intensity equal to or smaller than a threshold intensity at which the amorphous silicon film is crystallized. For instance, the step (a) includes the steps of forming the amorphous silicon film on the resin substrate by sputtering, and doping hydrogen ions into the amorphous silicon film.
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Choate Hall & Stewart LLP
Lee Hsien-Ming
NEC LCD Technologies Ltd.
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