Thin film magnetic memory device storing program information...

Details Thin film magnetic memory device storing program information... Thin film magnetic memory device storing program information...

2005-07-12

2005-07-12

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S171000, C365S158000

Reexamination Certificate

active

06917540

ABSTRACT:
Each of program cell and memory cells includes a magnetic storage portion of the same configuration. The program cell further includes a state change portion. That is, the program cell has the same structure as the memory cell, except that the state change portion is additionally provided thereto. As such, the program cell can be provided efficiently, as it can be designed the same as the memory cell in terms of the magnetic storage portion and others. The state change portion makes a transition to a fixed state based on an electrical change. Thus, the state change portion prevents program information from being rewritten by a magnetic noise or the like, and ensures stable storage of the program information.

REFERENCES:
patent: 6324093 (2001-11-01), Perner et al.
patent: 6347056 (2002-02-01), Ledford et al.
patent: 6349054 (2002-02-01), Hidaka
patent: 6683807 (2004-01-01), Hidaka
patent: 6778432 (2004-08-01), Ohtani
patent: 6791876 (2004-09-01), Tanizaki et al.
patent: 2001-217398 (2001-08-01), None

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