Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-29
2005-03-29
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C257S345000, C257S376000, C257S404000, C438S217000, C438S289000, C438S290000, C438S291000
Reexamination Certificate
active
06873008
ABSTRACT:
An asymmetrical channel implant from source to drain improves short channel characteristics. The implant provides a relatively high VTnet dopant adjacent to the source region and a relatively low VTnet dopant in the remainder of the channel region. One way to achieve this arrangement with disposable gate processing is to add disposable sidewalls inside the gate opening (after removing the disposable gate), patterning to selectively remove the source or gate side sidewalls, implant the source and drain regions and remove the remaining sidewall and the proceed. According to a second embodiment, wherein the channel implant can be symmetrical, a relatively low net VTimplant is provided in the central region of the channel and a relatively high net VTimplant is provided in the channel regions adjacent to the source and drain regions.
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Chatterjee Amitava
Houston Theodore W.
Brady III Wade James
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Thomas Toniae M.
Wilczewski Mary
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