Method for fabricating metal interconnections

Details Method for fabricating metal interconnections Method for fabricating metal interconnections

2005-05-24

2005-05-24

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S599000

Reexamination Certificate

active

06897135

ABSTRACT:
In the present method for fabricating metal interconnections, a Ni film is deposited on an insulating substrate by electroless plating, and a photoresist film is formed in a specified pattern on the Ni film. An Au film is deposited by electroless plating in a region where the Ni film is exposed and where the resist is not formed. The photoresist film is removed, and the Ni film exposed by the removal of the photoresist film is removed by etching. A Cu film is formed on the Au film by electroplating or electroless plating selectively. This method consists of only wet deposition process, involves less etching process and provides metal interconnections of low resistance.

REFERENCES:
patent: 4451554 (1984-05-01), Kishi et al.
patent: 5437999 (1995-08-01), Diebold et al.
patent: 5495667 (1996-03-01), Farnworth et al.
patent: 5830533 (1998-11-01), Lin et al.
patent: 6215196 (2001-04-01), Eldridge et al.
M. Ikeda, et al. “Low Resistance Copper Address Line for TFT-LCD”, Japan Display '89, pp. 498-501.

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