Semiconductor device with a capacitor having upper and lower...

Details Semiconductor device with a capacitor having upper and lower... Semiconductor device with a capacitor having upper and lower...

2005-05-24

2005-05-24

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06897509

ABSTRACT:
The semiconductor device comprises a semiconductor substrate10; a capacitor element40formed above the semiconductor substrate and including a lower electrode34, a capacitor insulation film36formed on the lower electrode and an upper electrode38formed on the capacitor insulation film; a shield layer14; 58formed at least either of above and below the capacitor element; and a lead-out interconnection layer22; 50formed between the capacitor element and the shield layer and electrically connected to the lower electrode or the upper electrode, a plurality of holes16, 60being formed in each of the shield layer and the lead-out interconnection layer. The shield layers are formed above and below the MIM capacitor, whereby combination of noises with the MIM capacitor can be prevented.

REFERENCES:
patent: 20010020713 (2001-09-01), Yoshitomi et al.
patent: 20020075743 (2002-06-01), Ooishi et al.
patent: 2001-7293 (2001-01-01), None

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