Method of fabricating a bismaleimide (BMI) ASA sacrifical...

Details Method of fabricating a bismaleimide (BMI) ASA sacrifical... Method of fabricating a bismaleimide (BMI) ASA sacrifical...

2005-03-29

2005-03-29

Chambliss, Alonzo (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S692000, C438S780000

Reexamination Certificate

active

06872654

ABSTRACT:
A method for implementing a bismaleimide (BMI) polymer as a sacrificial material for an integrated circuit air gap dielectric. The method of one embodiment comprises forming a first and second metal interconnect lines on a substrate, wherein at least a portion of the first and second metal interconnect lines extend parallel to one another and wherein a trough is located between the parallel portion of said first and second metal interconnect lines. A layer of bismaleimide is spin coated over the substrate. The layer of bismaleimide is polished with a chemical mechanical polish, wherein the trough remains filled with the bismaleimide. A diffusion layer is formed over the substrate. The substrate is heated to activate a pyrolysis of the bismaleimide. An air gap is formed in the trough in the space vacated by the bismaleimide.

REFERENCES:
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 5707749 (1998-01-01), Katagiri et al.
patent: 20030145458 (2003-08-01), Tani et al.
patent: 20040080052 (2004-04-01), Ou et al.

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