Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2005-05-24
2005-05-24
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C438S622000, C438S652000, C438S666000, C438S672000
Reexamination Certificate
active
06897125
ABSTRACT:
Various methods of forming backside connections on a wafer stack are disclosed. To form the backside connections, vias are formed in a first wafer that is to be bonded with a second wafer. The vias used for the backside connections are formed on a side of the first wafer along with an interconnect structure, and the backside connections are formed on an opposing side of the first wafer using these vias.
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Kim Sarah E.
List R. Scott
Morrow Patrick
Fourson George
Intel Corporation
Maldonado Julio J.
Tweet Kerry D.
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