Methods of forming a refractory metal silicide

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S649000, C438S664000

Reexamination Certificate

active

06943107

ABSTRACT:
A method of forming a crystalline phase material includes, a) providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase; and b) annealing the crystalline material of the first crystalline phase under conditions effective to transform it to a second crystalline phase. The stress inducing material preferably induces compressive stress within the first crystalline phase during the anneal to the second crystalline phase to lower the required activation energy to produce a more dense second crystalline phase. Example compressive stress inducing layers include SiO2and Si3N4, while example stress inducing materials for providing into layers are Ge, W and Co. Where the compressive stress inducing material is provided on the same side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is less than the first phase crystalline material. Where the compressive stress inducing material is provided on the opposite side of a wafer over which the crystalline phase material is provided, it is provided to have a thermal coefficient of expansion which is greater than the first phase crystalline material. Example and preferred crystalline phase materials having two phases are refractory metal silicides, such as TiSix.

REFERENCES:
patent: 4337476 (1982-06-01), Fraser et al.
patent: 4378628 (1983-04-01), Levinstein et al.
patent: 4568565 (1986-02-01), Gupta et al.
patent: 4897368 (1990-01-01), Kobushi et al.
patent: 4971655 (1990-11-01), Stefano et al.
patent: 5240739 (1993-08-01), Doan et al.
patent: 5376405 (1994-12-01), Doan et al.
patent: 5470794 (1995-11-01), Anjum et al.
patent: 5593924 (1997-01-01), Apte et al.
patent: 5608266 (1997-03-01), Agnello et al.
patent: 5665646 (1997-09-01), Kitano
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5776822 (1998-07-01), Fujii et al.
patent: 5828131 (1998-10-01), Cabral, Jr. et al.
patent: 5874351 (1999-02-01), Hu et al.
patent: 5997634 (1999-12-01), Sandhu et al.
patent: 6054387 (2000-04-01), Fukuda
patent: 6090708 (2000-07-01), Sandhu et al.
patent: 6376372 (2002-04-01), Paranjpe et al.
patent: 8-139056 (1996-05-01), None
Ilderem, V., et al., “Optimized Deposition Parameters For Low Pressure Chemical Vapor Deposited Titanium Silicidle”.Massachusetts Institute of Technology, vol. 135, No. 10, pp. 2590-2596 (Feb. 1988).
Nagabushnam, R. V., et al., “Kinetics And Mechanism Of The C49 to C54 Titanium Disilicide Phase Transformation Formation In Nitrogen Ambient”, 5 Pages (Nov. 1995).
Huang, et al. The Influence of Ge-Implantation on the Electrical Characteristics of the Ultra-Shallow . . . IEEE Electron Device Letters, vol. 17, No. 3, Mar. 1996, pp. 88-90.
Omar, M. Ali, “Elementary Solid State Physics,” © 1975 by addison-Wesley Publishing Company, Inc., pp. 539-542 (6 pages total).
Wolf, et al., “Silicon Processing for the VLSI Era—vol. 1-Process Technology,” © 1986 by Lattice Press, pp. 242,261, 262, 303 & 304 (7 pages total).
Ma et al., “Manipulation of the Ti/Si reaction path by introducing an amorphous Ge Interlayer”, 4thinternational conference on Solid-state and Integrated circuit technology Proceedings, 1995, pp. 35-37.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Methods of forming a refractory metal silicide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods of forming a refractory metal silicide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of forming a refractory metal silicide will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3402579

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.