Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-04-05
2005-04-05
Thomas, Tom (Department: 2815)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000, C257S040000, C257S295000
Reexamination Certificate
active
06876574
ABSTRACT:
A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.
REFERENCES:
patent: 5612255 (1997-03-01), Chapple-Sokol et al.
patent: 6297987 (2001-10-01), Johnson et al.
patent: 6621100 (2003-09-01), Epstein et al.
patent: WO 9825263 (1997-11-01), None
patent: WO 0010024 (2000-02-01), None
patent: WO 0235715 (2001-10-01), None
Patent Abstracts of Japan, vol. 2000, No. 16, May 8, 2001, JP2001006930.
Letters to Nature, Flederling, et al., “Injection and detection of a spin-polarized current in a light-emitting diode,” Dec. 16, 1999, vol. 402, pp. 787-789.
Letters to Nature, Kikkawa et al., “Lateral drag of spin coherence in gallium arsenide,” Jan. 14, 1999, vol. 307, pp. 139-141.
Datta et al., “Electronic analog of the electro-optic modulator,” Feb. 12, 1990, vol. 56, No. 7, pp. 665-667.
Rashba, “Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem,” Physical Review B, vol. 62, No. 24, Dec. 15, 2000-II, pp. 267-270.
Naji et al., “7.6 A 256kb 3.0V 1T11MTJ Nonvolatile Magnetoresistive,” IEEE International Solid-State Circuits conference, 2001, pp. 122-123, 438.
Coehoorn Reinder
Giebeler Carsten
Lenssen Kars-Michiel Hubert
Zilker Stephan Johann
Koninklijke Philips Electronics , N.V.
Landau Matthew C
Thomas Tom
Waxler Aaron
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