Self aligned metal interconnection and method of making the...

Details Self aligned metal interconnection and method of making the... Self aligned metal interconnection and method of making the...

2005-05-03

2005-05-03

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S621000

Reexamination Certificate

active

06887784

ABSTRACT:
A method of making a structure, includes filling a via hole with a conductive material, to form a via. The via hole passes through an etch-stop opening. In both directions along a first axis dielectric material is present between the via hole and edges of the etch-stop layer, and in both directions along a second axis, perpendicular to said first axis, dielectric material is not present between the via hole and edges of the etch-stop layer.

REFERENCES:
patent: 5985746 (1999-11-01), Kapoor
patent: 6124201 (2000-09-01), Wang et al.

Affiliated with

Also associated with

Rating

Self aligned metal interconnection and method of making the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self aligned metal interconnection and method of making the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self aligned metal interconnection and method of making the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3402000