Method of forming a thin film transistor on a transparent plate

Details Method of forming a thin film transistor on a transparent plate Method of forming a thin film transistor on a transparent plate

2005-03-01

2005-03-01

Thai, Luan (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S149000, C438S184000

Reexamination Certificate

active

06861302

ABSTRACT:
A method of forming a thin film transistor on a transparent plate. A silicon layer having an active area is provided. A first ion implantation is performed to form a deeper doped region in the silicon layer. A second ion implantation is performed to form a shallower doped region in part of the silicon layer. A transistor structure is formed on the silicon layer located at the active area. A glass plate is formed on the transistor structure. An annealing process whose temperature is about 200° C.˜600° C. is performed to peel the silicon layer from the deeper doped region and the shallower doped region, and to form a silicon thin film adhered to the transistor structure. Thus, the silicon thin film transistor can be formed on the glass plate without a high temperature process.

REFERENCES:
patent: 6020223 (2000-02-01), Mei et al.
patent: 6596573 (2003-07-01), Lee et al.

Affiliated with

Also associated with

Rating

Method of forming a thin film transistor on a transparent plate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a thin film transistor on a transparent plate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a thin film transistor on a transparent plate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3401879