Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-20
2005-09-20
Chaudhuri, Olik (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S286000
Reexamination Certificate
active
06946705
ABSTRACT:
A lateral short-channel DMOS includes an N−-type epitaxial layer110in a P−-type semiconductor substrate108, a P-type well114in the N−-type epitaxial layer110with a channel forming region C, an N+-type source region116in the P-type well114, an N+-type drain region118in N−-type epitaxial layer110, and a gate electrode122formed via a gate insulating film120in at least an upper part of the channel forming region C out of a region from the N+-type source region116to the N+-type drain region118. The lateral short-channel DMOS also includes an N+-type well140that is formed in the N−-type epitaxial layer110and includes a concentration of N-type dopant higher than the N−-type epitaxial layer110and lower than the N+-type drain region118, with the N+-type drain region118being formed in this N+-type well140.
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Chaudhuri Olik
Lowe Hauptman & Berner LLP
Malsawma Lex H.
Shindengen Electric Manufacturing Co. Ltd.
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