Magnetoresistive element and magnetic memory

Details Magnetoresistive element and magnetic memory Magnetoresistive element and magnetic memory

2005-09-27

2005-09-27

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C365S066000, C365S097000, C365S098000, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

06949779

ABSTRACT:
There are provided a first reference layer, in which a direction of magnetization is fixed, and a storage layer including a main body, in which a length in an easy magnetization axis direction is longer than a length in a hard magnetization axis direction, and a projecting portion provided to a central portion of the main body in the hard magnetization axis direction, a direction of magnetization of the storage layer being changeable in accordance with an external magnetic field.

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Tzu-Ning Fang, et al., “2D Write Addressability of Tunneling Junction MRAM Elements”, IEEE Transactions on Magnetics, vol. 37, No. 4, XP-001110930, Jul., 2001, pp. 1963-1966.

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