Semiconductor memory devices using sidewall spacers

Details Semiconductor memory devices using sidewall spacers Semiconductor memory devices using sidewall spacers

2005-07-05

2005-07-05

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S305000, C257S307000, C257S310000

Reexamination Certificate

active

06914286

ABSTRACT:
Storage nodes for semiconductor memory devices may be fabricated by repeatedly forming conductive and insulating spacers on mold oxide layer pattern sidewalls, to thereby obtain fine line patterns which can increase the surface area of the storage node electrodes. Supporters also may be provided that are configured to support at least one freestanding storage node electrode, to thereby reduce or prevent the storage node electrode from falling or bending towards an adjacent storage node electrode.

REFERENCES:
patent: 5126280 (1992-06-01), Chan et al.
patent: 5554556 (1996-09-01), Ema
patent: 5721154 (1998-02-01), Jeng
patent: 5753419 (1998-05-01), Misium
patent: 5854105 (1998-12-01), Tseng
patent: 5966600 (1999-10-01), Hong
patent: 6025624 (2000-02-01), Figura
patent: 6380576 (2002-04-01), Tran
patent: 2003/0104701 (2003-06-01), Wang et al.
patent: 42 03 400 (1992-08-01), None
patent: 9-116117 (1997-05-01), None
Combined Search and Examination Report Under Sections 17 and 18(3), UK Application No. GB 0314707.1, Dec. 19, 2003.
Translation of an Official Letter as issued by the German Patent and Trademark Office, Official File No. 103 27 945.8-33, Nov. 2, 2004.
Notice to Submit Response, KR Application No. 2002-0037059, Jul. 30, 2004.

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