Semiconductor device having an injection substance to knock...

Details Semiconductor device having an injection substance to knock... Semiconductor device having an injection substance to knock...

2005-05-10

2005-05-10

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S214000, C257S369000, C257S382000, C257S383000, C257S384000, C257S386000, C257S339000, C438S301000, C438S305000, C438S528000, C438S653000, C438S643000

Reexamination Certificate

active

06891232

ABSTRACT:
A semiconductor device comprises: a semiconductor substrate; a gate insulating film formed on the top surface of the semiconductor substrate; a gate electrode formed on the gate insulating film; diffusion layers formed in the semiconductor substrate to be used a source layer and a drain layer; and a silicide layer formed to overlie the diffusion layers; wherein an oxygen concentration peak, where oxygen concentration is maximized, is at a level lower than said top surface in a cross-section taken along a plane perpendicular to said top surface.

REFERENCES:
patent: 6008124 (1999-12-01), Sekiguchi et al.
patent: 6207995 (2001-03-01), Gardner et al.
patent: 6346732 (2002-02-01), Mizushima et al.
patent: 6475868 (2002-11-01), Hao et al.
patent: 9-8297 (1997-01-01), None
patent: 2000-323689 (2000-11-01), None
patent: 2001-189451 (2001-07-01), None

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