Semiconductor integrated circuit device

Details Semiconductor integrated circuit device Semiconductor integrated circuit device

2005-04-19

2005-04-19

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S313000, C257S314000, C257S348000

Reexamination Certificate

active

06882008

ABSTRACT:
A semiconductor integrated circuit device comprises a semiconductor substrate; an insulating layer formed on the semiconductor substrate; a semiconductor layer insulated from the semiconductor substrate by the insulating layer; source regions of a first conduction type and drain regions of the first conduction type both formed in the semiconductor layer; body regions of a second conduction type formed in the semiconductor layer between the source regions and the drain regions to store data by accumulating or releasing an electric charge; word lines formed on the body regions in electrical isolation from the body regions to extend in a first direction; bit lines connected to the drain regions and extending in a direction different from the first direction; and buried wirings formed in the insulating layer in electrical isolation from the semiconductor substrate and the semiconductor layer, said buried wirings extending in parallel with the bit lines.

REFERENCES:
patent: 6538916 (2003-03-01), Ohsawa
patent: 6617651 (2003-09-01), Ohsawa
patent: 6621725 (2003-09-01), Ohsawa
patent: 6825524 (2004-11-01), Ikehashi et al.
patent: 20040058506 (2004-03-01), Fukuzumi
patent: 2002-246571 (2002-08-01), None
Charles Kuo, et al., “A Capacitorless Double-Gate DRAM Cell Design for High Density Applications”, IEDM Tech. Digest, Dec. 2002, pp. 843-846.

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